Transcend 4gb Ddr3-1600 Cl11 Sdram Jm1600ksn-4g - WC01
[JM1600KSN-4G]



Part Number: JM1600KSN-4G

Manufacturer: transcend

Condition: New

Short Description:

Transcend 4gb Ddr3-1600 Cl11 Sdram Jm1600ksn-4g

Transcend 4gb Ddr3-1600 Cl11 Sdram Jm1600ksn-4g - WC01

£24.00
£28.80 - Inc VAT




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The JM1600KSN-4G is a 512M x 64bits DDR3-1600 SO-DIMM. The JM1600KSN-4G consists of 16pcs
256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.
The JM1600KSN-4G is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Reviews

Specs

Memory
Internal memory 4 GB
Internal memory type DDR3
Memory clock speed 1600 MHz
Component for Notebook
Memory form factor 204-pin SO-DIMM
Memory layout (modules x size) 1 x 4 GB
CAS latency 11
Memory voltage 1.5 V
Module configuration 512M x 64
Weight & dimensions
Width 6.76 cm
Depth 3 cm
Height 1 mm
Other features
Chips organisation 256Mx8
Design
Certification RoHS

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Features

Transcend Speicher 4GB, JetRam. Internal memory: 4 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz. Certification: RoHS. Width: 6.76 cm, Depth: 3 cm, Height: 1 mm. Chips organisation: 256Mx8

Product Description

The JM1600KSN-4G is a 512M x 64bits DDR3-1600 SO-DIMM. The JM1600KSN-4G consists of 16pcs
256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.
The JM1600KSN-4G is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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